Netherlands-based semiconductor firm Nexperia has obtained automotive certification for its vary of silicon carbide (SiC) MOSFETs appropriate for functions like onboard chargers (OBC) and traction inverters, in addition to DC-DC converters, heating air flow and air-conditioning techniques (HVAC).
These gadgets (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q), which ship RDS(on) values of 30, 40 and 60 mΩ and main figures-of-merit (FoM), had been beforehand supplied in industrial grade and have now been awarded AEC-Q101 certification.
The switches are housed within the more and more widespread surface-mounted D2PAK-7 package deal which is extra appropriate for automated meeting operations than through-hole gadgets.
RDS(on) is a essential efficiency parameter for SiC MOSFETs because it impacts conduction losses. Nonetheless, concentrating on the nominal worth neglects the truth that it may well improve by greater than 100% as gadget working temperatures rise, leading to a substantial rise of conduction losses. Temperature stability is much more essential when SMD package deal applied sciences are used quite than through-hole know-how since gadgets are cooled by means of the PCB.
Nexperia has ensured that its new SiC MOSFETs supply temperature stability, in order that the nominal worth of RDS(on) will increase by solely 38% over an working temperature vary from 25° C to 175° C. This allows prospects to handle greater output energy of their functions achieved with the next nominal 25° C rated RDS(on) from Nexperia with out sacrificing efficiency.
“This characteristic permits to get extra energy out of the chosen Nexperia SiC MOSFET gadgets in comparison with equally rated RDS(on) gadgets from different distributors, delivering a transparent value benefit for purchasers on semiconductor degree. Moreover, relaxed cooling necessities, extra compact passive parts, and better achievable effectivity enable prospects extra levels of freedom of their design and decrease whole value of possession,” stated Edoardo Merli, SVP and Head of Enterprise Group Extensive Bandgap, IGBT & Modules (WIM) at Nexperia.
Nexperia plans to launch automotive-qualified variations of its 17 mΩ and 80 mΩ RDS(on) SiC MOSFETs this yr.
Supply: Nexperia
